ace 5801 p - channel p ower mosfet ver 1. 2 1 d escription the ace5801 uses advanced trench technology to provide excellent r ds( on ) , low gate charge and operation with low gate voltage. . this device is suitable for use as a load switching application and a wide variety of other applications. features ? advanced tre nch mosfet process technology ? ultra low on - resistance with low gate charge applications ? pwm applic ation ? load switch ? battery charge in cellular handset absolute maximum ratings p arameter s ymbol m ax u nit drain - source voltage v ds s - 12 v gate - source voltage v gs s 8 v drain current - contin uous i d - 16 a drain current - pulsed (note 1) i dm - 65 power dissipation (note 2, t a =25 ) p d 2.5 w maximum power dissipation (note 3, t c = 25 ) 18 thermal resista nce from junction to ambient (note 4) r ja 50 /w thermal resistance from junction to case (note 4) r j c 6.9 jun ction temperat ure t j 150 storage temperature t stg - 55~150 packaging type dfnwb2*2 - 6l
ace 5 8 0 1 p - channel p ower mosfet ver 1. 2 2 ordering i nformation ace 5 8 0 1 xx + h electrical characteristic s ( t a =2 5 o c un less otherwise noted ) parameter symbol conditions min. typ. max. unit off characteristics drain - source breakdown voltage v (br)dss v gs =0v, i d = - 250ua - 1 2 v z e r o g a t e v o l t a g e d r a i n c u r r e n t i dss v ds = - 1 2 v, v gs =0v - 1 ua gate - b o d y leakage current i gss v gs = 8 v, v ds =0v 100 na on characteristics ( n o t e 5 ) drain - source on - state resistance r ds(on) v gs = - 4.5v, i d = - 6 . 7 a 2 1 m v gs = - 2.5 v, i d = - 6 . 2 a 2 7 gate threshold voltage v gs(th) v ds =v gs , i d = - 250ua - 0.4 - 0.7 - 1 v forward transconductance g fs v ds = - 1 0 v , i d = - 6 . 7 a 4 0 s dynamic characteristics ( n o t e 6 ) input capacitance c iss v ds = - 10 v, v gs =0v f =1 mhz 2700 pf output capacitance c oss 680 r everse transfer capacitance c rss 590 total gate charge q g v ds = - 6v, v gs = - 8v, i d = - 10a 60 100 nc v ds = - 6v, v gs = - 4.5 v, i d = - 10a 35 48 gate - source charge q gs 5 gate - drain charge q gd 10 drain - source diode characteristics diode forward current (note 5) i s - 16 a diode forward voltage (note 4) v sd i s = - 1.6a,v gs =0v - 0.5 - 1.2 v note: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. this test is performed with no heat sink at t a =25 . 3. this test is performed with infinite heat sink at t c =25 . 4. surface mounted on fr4 board, t 10s. 5. pulse test: pulse with 300 s,duty cycle 2%. 6. guaranteed by design, not subject to production testing. l n : d f n w b 2 * 2 - 6 l pb - free halogen - free
ace 5 8 0 1 p - channel p ower mosfet ver 1. 2 3 typical performance characteristics
ace 5 8 0 1 p - channel p ower mosfet ver 1. 2 4 packing information df n w b 2 * 2 - 6 l
ace 5 8 0 1 p - channel p ower mosfet ver 1. 2 5 notes ace does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ace electronics co., ltd. as sued herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sust ain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. a critical component is any component of a life support de vice or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ace technology co., ltd. http://www.ace - ele.com/
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